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BSC520N15NS3GATMA1
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.
Availability: Out of Stock
Package Type: POWERTDFN-8
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the BSC520N15NS3GATMA1
| Part Name | BSC520N15NS3GATMA1 |
| Manufacturer | Infineon |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/bsc520n15ns3-g/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 21 A |
| Transistor Material | Si |
| Width | 6.1 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 150 V |
| Maximum Gate Threshold Voltage (V) | 4 (V) |
| Package Type | TDSON |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2 (V) |
| Maximum Operating Temperature | +150 °C |
| Channel Type | N |
| Length | 5.35 (mm) |
| Typical Gate Charge Vgs | 8.7 nC @ 10 V |
| Pin Count | 8 |
| Channel Mode | Enhancement |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 57 W |
| Series | OptiMOSâ„¢ 3 |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 1.1 (mm) |
| Minimum Operating Temperature | -55 °C |
| Maximum Drain Source Resistance | 52 mΩ |
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