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IRFZ46NPBF
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 16.5 Milliohms,ID 53A,TO-220AB,PD 107W,-55C | Infineon IRFZ46NPBF
Availability: Out of Stock
Package Type: TO-220-3
CAD Models: Footprint
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| Verification | Issues | Specs | Pricing |
Specifications for the IRFZ46NPBF
| Part Name | IRFZ46NPBF |
| Manufacturer | Infineon Technologies |
| Category | Electronic Components |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/irfz46n/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 53 A |
| Transistor Material | Si |
| Width | 4.69 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 55 V |
| Maximum Gate Threshold Voltage (V) | 4 (V) |
| Package Type | TO-220AB |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2 (V) |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Channel Type | N |
| Length | 10.54 (mm) |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 107 W |
| Series | HEXFET |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 8.77 (mm) |
| Minimum Operating Temperature | -55 °C |
| Maximum Drain Source Resistance | 17 mΩ |
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